This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (VCE) or Base-Emitter (VBE) could be 80V. When this transistor is fully biased then it can allow a maximum of 1.5A to flow across the collector and emitter. To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 1/10th of the collector current and voltage across the base emitter pin should be 5V maximum. The maximum amount of current that could flow through the Collector pin is 1.5A, hence we cannot connect loads that consume more than 1.5A using this transistor. TIP31C, SL100, S8050, BC547, 2N2222, 2N4401īD139 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pinīD139 has a gain value of 40 to 160, this value determines the amplification capacity of the transistor. Note: Complete Technical Details can be found at the BD139 transistor datasheet provided at the bottom of this page. Emitter Base Breakdown Voltage (VBE) is 5V.
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